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铟掺杂氧化锌-氧化硅纳米电缆芯-壳异质结构的制备及表征
引用本文:齐俊杰,杨亚,廖庆亮,黄运华,刘娟,张跃.铟掺杂氧化锌-氧化硅纳米电缆芯-壳异质结构的制备及表征[J].物理化学学报,2009,25(9):1721-1724.
作者姓名:齐俊杰  杨亚  廖庆亮  黄运华  刘娟  张跃
作者单位:Department of Materials Physics&Chemistry, University of Science and Technology Beijing, Beijing 100083, P. R. China,State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, P. R. China
基金项目:The project was supported by the National Key Basic Research Program of China,Projects of International Cooperation and Exchanges of the National Natural Science Foundation of China,Major Project of the International Cooperation of the Ministry of Science and Technology;China,National Natural Science Foundation of China (50872008).国家重点基础研究发展计划,国家自然科学基金国际合作与交流重大项目,科技部国际科技合作计划重大项目,国家自然科学基金 
摘    要:利用碳热还原反应气相沉积法制备了铟掺杂氧化锌-氧化硅纳米电缆芯-壳异质结构. X射线衍射(XRD)、透射电子显微镜(TEM)及X射线能谱(EDS)研究表明, 纳米电缆内芯为结晶完好的单晶纤锌矿结构, 外壳包覆一层氧化硅非晶层. 纳米电缆直径为30-60 nm, 长径比大于100. 掺杂纳米异质结构的生长机理与传统的金属晶种辅助气-液-固(VLS)机理有所不同. 这种掺杂纳米异质结构有望作为理想的结构单元应用于纳米器件领域.

关 键 词:纳米结构  In-掺杂  氧化锌  纳米电缆  生长机理  
收稿时间:2009-03-05
修稿时间:2009-07-10

Fabrication and Characterization of In/ZnO-SiOx Core-Shell Nanocable Heterostructures
QI Jun-Jie,YANG Ya,LIAO Qing-Liang,HUANG Yun-Hua,LIU Juan,ZHANG Yue.Fabrication and Characterization of In/ZnO-SiOx Core-Shell Nanocable Heterostructures[J].Acta Physico-Chimica Sinica,2009,25(9):1721-1724.
Authors:QI Jun-Jie  YANG Ya  LIAO Qing-Liang  HUANG Yun-Hua  LIU Juan  ZHANG Yue
Institution:Department of Materials Physics&Chemistry, University of Science and Technology Beijing, Beijing 100083, P. R. China|State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, P. R. China
Abstract:Indiumdoped ZnO-SiOx core-shell nanocable heterostructures were successfully fabricated by introducing In ions into the raw material via a simple thermal evaporation process. X-ray diffraction (XRD), transmission electron microscopy (TEM), and energy dispersive X-ray spectroscopy (EDS) were used to investigate the structure of the In/ZnO-SiOx core-shell fibers. Results indicated that the core zone of ZnO nanocables is single crystalline In/ZnO with a wurtzite structure and the shell zone is a SiOx amorphous layer. The nanocables have high aspect ratio of more than 100 with widths of 30-60 nm. The growth mechanismof the nanocable heterostructures is different fromthe commonly reported metal-seeded vapor-liquid-solid (VLS) mechanism. The synthesis of core-shell structures reveals the general potential of radial heterostructure growth for the development of nanowire-based devices.
Keywords:Nanostructure  In-doping  ZnO  Nanocable  Growth mechanism
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