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A passively Q-switched Yb:YAG microchip laser |
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| Authors: | G.J. Spühler R. Paschotta M.P. Kullberg M. Graf M. Moser E. Mix G. Huber C. Harder U. Keller |
| Affiliation: | Ultrafast Laser Physics, Institute of Quantum Electronics, Swiss Federal Institute of Technology, ETH H?nggerberg–HPT, 8093 Zürich, Switzerland, CH Centre Suisse d’Electronique et de Microtechnique-Zürich, Badenerstrasse 569, 8048 Zürich, Switzerland, CH Institut für Laser-Physik, Universit?t Hamburg; Jungiusstr. 9–11, 20355 Hamburg, Germany, DE JDS Uniphase AG, Binzstrasse 17, 8045 Zürich, Switzerland, CH |
| Abstract: | We present a diode-pumped passively Q-switched Yb:YAG microchip laser, using a semiconductor saturable absorber mirror. We obtained pulses with 1.1-μJ energy, 530-ps duration, 1.9-kW peak power, and a repetition rate of 12 kHz. The laser is oscillating in a single longitudinal mode. Received: 23 October 2000 / Published online: 7 February 2001 |
| Keywords: | PACS: 42.55.Xi 42.60.Gd |
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