聚(肉桂酸乙烯基氧乙酯)的合成与表征

本文报道的是一种聚(肉桂酸乙烯基氧乙酯)负性光致抗蚀剂。它具有分辨力和灵敏度高、粘附性强、显影后很少产生皱胶、针孔罕见、贮存稳定和等离子去胶效果好等优异性能。在-75℃的温度下,向肉桂酸乙烯基氧乙酯单体中注入三氟化硼乙醚引发剂即可发生阳离子聚合,制得聚(肉桂酸乙烯基氧乙酯)。使用精制单体和助催化剂,在低温条件下,可合成出高分子量和高聚合产率的聚(肉桂酸乙烯基氧乙酯)。通过分级试样的光散射和粘度测定确立了相应的Mark-Houwink方程. 这种负胶的光刻最细条宽为0.5μm,适用于1-1.5μm以上条宽的生产工艺。

SYNTHESIS AND CHARACTERIZATION OF POLYVINYLOXYETHYL CINNAMATE

In this paper a negative photoresist--polyvinyloxyethyl cinnamate, which has excellentproperties such as high resolution, high sensitivity, good adhesion, slight flagging after development, rare occurances of pin holes, high stability during storage and plasma incineration stripping was reported. Polyvinyloxyethyl cinnamate was polymerized by cationic polymerization, which was carried out at -75℃ and the boron trifluoride etherate was used as an initiator. Polyvinyloxyethyl cinnamate with high molecular weight and high yield can be obtained at low temperature, when purified monomer and coinitiator was used. The correlation Mark-Houwink equation for this polymer have been established by the measurement of frac-tionated samples with light scattering and viscometry methods. The finest line width of this photoresist is 0.5 μm and the useful line width in technique is≥1μm.