| 掺杂Eu2O3的SrTiO3及SnO2光致发光 |
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| 引用本文： | 毕只初,J. KOSSANYI,P. C&#,N&#,D&#,SE,A. QUIVY.掺杂Eu2O3的SrTiO3及SnO2光致发光[J].影像科学与光化学,1992,10(1):66-70. |
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| 作者姓名： | 毕只初 J. KOSSANYI P. C&# N&# D&# SE A. QUIVY |
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| 作者单位： | 1. 中国科学院感光化学研究所, 北京 100101;2. 法国国家科研中心分子材料实验室;3. 法国国家科研中心化学冶金研究中心 |
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| 摘 要： | 用具有大能隙的本征半导体(SrTiO3及SnO2)粉末作本体,分别掺杂1%(原子百分数)的Eu2O3;所得物质表现出Eu3+离子的线发射光谱特性,但相对发光强度及光谱形状有相当大的变化。X射线衍射结构分析显示Eu3+在SrTiO3晶格里是处在间隙位置,而它在SnO2晶格里则形成新物相Eu2Sn2O7。
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| 关 键 词： | 稀土氧化物 大能隙半导体 掺杂 光致发光 |
| 收稿时间： | 1990-07-14 |
PHOTOLUMINESCENCE OF Eu2O3 DOPED SrTiO3 AND SnO2 POWDER |
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| BI ZHI-CHU,J. KOSSANYI,P. C&#,N&#,D&#,SE,A. QUIVY.PHOTOLUMINESCENCE OF Eu2O3 DOPED SrTiO3 AND SnO2 POWDER[J].Imaging Science and Photochemistry,1992,10(1):66-70. |
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| Authors: | BI ZHI-CHU J KOSSANYI P C&# N&# D&# SE A QUIVY |
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| Institution: | 1. Institute of Photographic Chemistry, Academia Sinica, Beijing 100101, P. K. China;2. Laboratoire des Materiaux Molcculaircs, C. N. R. S., Prance;3. Centre d’Etudes de Chimie Metallurgique, C. N. R. S., France |
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| Abstract: | Powder of large energy gap semiconductor SrTiO3 and SnO2 has been doped with Eu2O3 (1 atom % of Eu) and their photoluminescent properties were investigated. It was found that the main behaviors of their emission are similar with that of pure Eu2O3 but the relative intensity and the emission pattern of the spectra is greatly changed. It was shown from X-ray powder diffraction analysis that the Eu3+ ion in 1% Eu doped SrTiO3 is located at the interstitial site of the SrTiO3 lattice and in 1% Eu doped SnO2 is combined with SnO2 to from Eu2Sn2O7. |
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| Keywords: | rare earth oxide large energy gap semiconductor doping photolumine-scence |
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