|
|||||
|
|
Shallow States of Donor Impurities at Defective Semiconductor Surfaces |
|
| Authors: | Hong SUN Shi-wei GU |
| Affiliation: | 1. Department of Physics and Institute of Condensed Matter Physica, Shanghai Jim Tong University, Shanghai 200030, China;2. Center of Theoretical Physics, CCAST (World Laboratory), Beijing 100080;3. International Center for Material Physics, Academia Sinica, Shenyang 110015, China |
| Abstract: | Ground state energies for shallow states of donor impurities at certain idealized defective isotropic semiconductor surfaces are calculated variationally for GaAa surfaces with electrons confined within the semiconductor. Calculations show that impurity states with donor ions located at parts projecting out of surfaces have lower ground state energiea than those with ions located at parts sunk into surfaces. |
| Keywords: | |
| 点击此处可从《理论物理通讯》浏览原始摘要信息 | |
| 点击此处可从《理论物理通讯》下载全文 | |