Atomic structures of gallium-rich GaAs(001)-4×2 and GaAs(001)-4×6 surfaces |
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| Authors: | R. Z. Bakhtizin Qikun Xue T. Sakurai T. Hashizume |
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| Affiliation: | (1) Bashkir State University, 450074 Ufa, Russia;(2) Institute for Materials Research, Tohoku University, Sendai 980-77, Japan;(3) Hitachi Advanced Laboratory, Hitachi Ltd., Saitama 350-03, Japan |
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| Abstract: | Scanning tunneling microscopy is applied for the first time to an atomic-resolution investigation of the 4×2 and 4×6 phases on a gallium-rich GaAs(001) surface obtained by molecular-beam epitaxy and migration-enhanced epitaxy. A unified structural model is proposed with consideration of the results of experiments and first-principles calculations of the total energy. In this model the 4×2 phase consists of two Ga dimers in the top layer and a Ga dimer in the third layer, and the 4×6 phase is matched to periodically arranged Ga clusters at the corners of a 4×6 unit cell on top of the 4×2 phase. Zh. éksp. Teor. Fiz. 111, 1858–1868 (May 1997) |
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