Photoluminescence of AgGaTe2 single crystals |
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| Authors: | I. V. Bodnar V. F. Gremenok R. V. Martin O. N. Obraztsova M. V. Yakushev A. E. Hill R. D. Pilkington R. D. Thomlinson |
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| Affiliation: | (1) Belarusian State University of Information Science and Radioelectronics, 6 P. Brovka Str., 220027 Minsk, Belarus;(2) Institute of the Solid-State and Semiconductor Physics of the National Academy of Sciences of Belarus, Minsk, Belarus;(3) Department of Physics and Applied Physics, Stratclyde University, G4 ONG Glasgow, Great Britain;(4) Salford University, M5 4WT Salford, Great Britain |
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| Abstract: | ![]()
The temperature dependence of the photoluminescence spectra of AgGaTe2 single crystals obtained by the Bridgman-Stockbarger method is investigated within the temperature range 10-300 K. The emission bands associated with donor-acceptor recombination and free and bound excitons are detected. The bonding energy of the free exciton and the forbidden gap of the crystals at 10 K are calculated. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 67, No. 2, pp. 222–224, March–April, 2000. This work is partially sponsored by the British Royal Society, INTAS (grant No. 634), and EPSRC (grant GR/L 62757). |
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| Keywords: | photoluminescence exciton forbidden gap chalcopyrite semiconductors |
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