Electron-hole plasma generation and evolution in semiconductors |
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Authors: | Monique Combescot Julien Bok |
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Institution: | Groupe de Physique des Solides de l''Ecole Normale Supérieure, 24 rue Lhomond, 75231 Paris Cedex 05, France |
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Abstract: | We discuss various physical problems related to dense electron-hole (e-h) plasmas in silicon-like semiconductors such as: the e-h plasma energy in the quantum and classical limits including the actual band structure; the dielectric constant using the appropriate plasma frequency mass and the variation of the plasma relaxation time due to e-h collisions; the plasma generation including its nonlinear aspect when the e-h density passes the plasma frequency density of the pump beam; the e-h plasma evolution due to Auger recombination and impact ionization as well as the e-h plasma hydrodynamics; finally, we will discuss also the possibility of a very fascinating melting at T=0. |
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