Properties of permalloy films produced in low-temperature plasma flows with a controlled composition |
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| Authors: | V A Aleksandrov A G Veselov O A Kiryasova and A A Serdobintsev |
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| Institution: | (1) High Density Interconnection Group, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba Ibaraki, 305-8568, Japan |
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| Abstract: | A simple version of a flow-forming plasma sputtering system is proposed. The causes that determine the properties of the deposited
films are revealed when the composition, energy, and particle density of the flow are controlled. The electron component of
the plasma flow and an increase in its ion component are found to degrade the magnetic properties of the films. The ferromagnetic
resonance (FMR) line half-width of 10- to 150-nm-thick films is shown to mainly depend on the energy of the neutral flow component,
which is specified by the sputtering conditions at an anode voltage of 400–700 V. In this rather narrow energy range, the
FMR line half-width is 25 Oe for cold substrates. |
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