Injection of holes and their localization in defect states at the interface between an electrochromically sensitive single crystal and an amorphous thin film of a complex tungsten oxide

The dynamic current-voltage and estance-voltage characteristics of amorphous thin films of complex tungsten oxides (tungsten oxide bronzes) and, for comparison, tungsten oxide bronze single crystals have been measured with a change in the character of their interaction with electromagnetic radiation. The optoelectronic properties of the samples have been analyzed taking into account the important role of the processes of hole injection, carrier localization in traps, and nanostructurization. A model of the physical processes occurring in the surface and near-surface regions at the interface between a tungsten oxide bronze and a liquid proton electrolyte, different from the generally accepted approach, is considered.