Influence of the VPE parameters on the epitaxial film properties for the (Pb1−xSnx)1+yTe1−y system

Epitaxial films have been produced for 0 ? x ? 1 by steps of 0.1. The growth rate, crystalline quality, carrier concentration and composition have been measured as a function of source, substrate and Te₂ source temperature. The growth rate is adjustable between 0.1 and 36 μm h^-1 and the films have smooth and shiny surfaces. The crystalline quality, conduction type and carrier concentration is mainly determined by the Te₂ pressure. It is possible to choose the type and the carrier concentration in the stable region for a source composition x ? 0.2. The films are always p-type if x ? 0.3. The composition of the films is varied by the source and by the substrate temperature. It is possible to vary the film composition compared to the source composition in the range of ±20% by varying the substrate temperature.