低温近场光学显微术对InGaN/GaN多量子阱电致发光温度特性的研究

使用实验室自制的低温近场光学显微镜研究了InGaN/GaN多量子阱发光二极管在室温和液氮 温度下的近场光学像和近场光谱，发现随着温度的降低，不仅近场光学像的光强起伏大大减 小，量子阱发光峰先蓝移后红移，而且在液氮温度下在光子能量更高的位置上出现了新的发 光峰.通过对实验结果的分析，我们将这个新出现的峰归结为p-GaN层中导带底-受主能级间 跃迁形成. 关键词： InGaN/GaN多量子阱 发光二极管 近场光学 低温

Study of temperature dependent electroluminescence of InGaN/GaN multiple quantum wells using low temperature scanning near-field optical microscopy

Though GaN based semiconductor materials and devices have achieved giant commerc ial success, there were few reports on their electroluminescent near-field optic al studies at low temperature. In this paper we present our results of the elect roluminescent near-field images and spectra at both room temperature and liquid nitrogen temperature by using a lab-made low temperature scanning near-field opt ical microscope. We found that with the decreasing of sample temperature, the fl uctuation of electroluminescent intensity in the near-field images is reduced gr eatly and the peak photon energy of the spectra emitted from the quantum wells e xhibits a blue-shift at first and then a red-shift. A new spectral peak emerges at higher photon energy at liquid nitrogen temperature. According to our analysi s, this higher photon energy peak is attributed to the transition from the botto m of conduction band to the acceptor energy states in the p-GaN cap layer.