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SrBi2Ta2O9铁电薄膜微结构及其抗疲劳等铁电特性的研究
引用本文:杨平雄,邓红梅,郑立荣,林成鲁.SrBi2Ta2O9铁电薄膜微结构及其抗疲劳等铁电特性的研究[J].物理学报,1997,46(7):1449-1456.
作者姓名:杨平雄  邓红梅  郑立荣  林成鲁
作者单位:中国科学院上海冶金研究所信息功能材料国家重点实验室
摘    要:在低温Pt/Ti/SiO2/Si衬底上用脉冲准分子激光沉积技术结合氧气氛下700℃退火获得高质量的SBT薄膜,其择优取向为(008)和(115).薄膜厚度约为200nm.铁电性能测试显示较饱和的、方形的电滞回线,其剩余极化和矫顽电场分别为10μC/cm2和57kV/cm,在1010次开关极化后没有显示任何疲劳,在5V直流电压下的漏电流密度约为4×10-8A/cm2,直流击穿电场约为250kV/cm 关键词

收稿时间:1996-12-31

MICROSTRUCTURE AND PHYSICAL PROPERTIES OF SrBi2Ta2O9 FERROELECTRIC THIN FILMS
YANG PING-XIONG,DENG HONG-MEI,ZHENG LI-RONG and LIN CHENG-LU.MICROSTRUCTURE AND PHYSICAL PROPERTIES OF SrBi2Ta2O9 FERROELECTRIC THIN FILMS[J].Acta Physica Sinica,1997,46(7):1449-1456.
Authors:YANG PING-XIONG  DENG HONG-MEI  ZHENG LI-RONG and LIN CHENG-LU
Abstract:High quality SrBi2Ta2O9 thin films on Pt/Ti/SiO2/Si substrates were obtained using pulsed laser deposition combined with annealing at 700℃ in oxygen. The high diffraction peak of(008) and (115) was characterized by X-ray diffractometer.Good ferroelectric properties were obtained from the thin films;the remnant polarization and coercive field were about 10μC/cm2 and 57kV/cm, respectively. No fatigue was observed at up to 1010 switching cycles.Leakage current and the dc breakdown field measurement were about 4×10-8A/cm2 at 5V and 250kV/cm,respectively.
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