Center for Space Science and Applied Research, Chinese Academy of Sciences, Beijing 100080, China
Abstract:
To simulate single event effect(SEE)by pulsed Iaser is a new approach in ground-based simulation of SEE in recent years.In this paper the way in which picosecond pulsed Iaser interacts with semiconductor and the mechanism of SEE inducement are analyzed.Additionally.associated calculations are made in the case of Nd:YAG and Ti:Sapphire Iasers generally used in experiments and silicon device.with comparisons made between the two lasers.In the meantime.the fundamentaI principle for determining laser parameters and their typicaI ranges of values are provided according to the results.
