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金属杂质辅助低能氩离子束诱导蓝宝石自组织纳米结构
引用本文:唐黎,陈智利,刘雨昭,毕倩,惠迎雪,刘卫国.金属杂质辅助低能氩离子束诱导蓝宝石自组织纳米结构[J].光子学报,2021(2):183-191.
作者姓名:唐黎  陈智利  刘雨昭  毕倩  惠迎雪  刘卫国
作者单位:西安工业大学光电工程学院
基金项目:科技部政府间国际科技创新合作重点专项项目(No.2018YFE0199200);陕西省自然科学基础研究计划项目(No.2018JM6082)。
摘    要:使用实验室自主研发的等离子抛光与刻蚀系统,研究了不同入射能量下不锈钢杂质辅助Ar+离子束刻蚀蓝宝石表面自组织纳米结构的形成机制。采用Taylor Surf CCI2000非接触式表面测量仪和原子力显微镜分别对刻蚀后蓝宝石样品的粗糙度、纳米结构的纵向高度和表面形貌进行了分析。研究表明:引入不锈钢杂质后,当离子束入射角度为65°、束流密度为487μA/cm2、刻蚀时间为60 min、离子束入射能量为1000 eV时,蓝宝石样品表面出现了纵向高度为11.1 nm高度有序的条纹状纳米结构;随着入射能量的增加,表面开始出现岛状纳米结构;当入射能量为1200 eV时,形成了岛状与条纹状相结合的纳米结构,其纵向高度为13.6 nm;入射能量继续增加,蓝宝石表面岛状结构密度变大;当入射能量达1400 eV时,样品表面岛状结构的纵向高度为18.8 nm;入射能量为1600 eV时,样品表面出现较为有序且密集的岛状结构,其纵向高度为20.1 nm。自组织纳米结构先是以“条纹”形状出现,随着入射能量的增加,引入的金属杂质打破了在离子束溅射过程中表面生长机制和表面平滑机制的平衡状态,形成了岛状结构,该结构促进了纳米结构的生长,改变了纳米结构的有序性。

关 键 词:自组织纳米结构  低能Ar+离子束  杂质共沉积  岛状纳米结构  蓝宝石  表面形貌

Metal-assisted Low-energy Ar+Ion Beam Induces Self-organized Nanostructure of Sapphire
TANG Li,CHEN Zhili,LIU Yuzhao,BI Qian,XI Yingxue,LIU Weiguo.Metal-assisted Low-energy Ar+Ion Beam Induces Self-organized Nanostructure of Sapphire[J].Acta Photonica Sinica,2021(2):183-191.
Authors:TANG Li  CHEN Zhili  LIU Yuzhao  BI Qian  XI Yingxue  LIU Weiguo
Institution:(Shaanxi Province Key Laboratory of Thin Film Technology and Optical Test,School of Photoelectrical Engineering,Xi′an Technological University,Xi′an 710021,China)
Abstract:The plasma polishing and etching system independently developed by the laboratory was used to prepare sapphire self-organized nanostructures.The formation mechanism of self-organized nanostructures by Ar+ion beam sputtering assisted with stainless steel at different incident energy was studied.The roughness,longitudinal height of nanostructure and surface morphology of the etched sapphire sample were respectively measured by Taylor Surf CCI2000 non-contact surface measuring instrument and atomic force microscope.With the ion beam incident angle of 65°,the beam current density of 487μA/cm2,the etching time of 60 min,and the ion beam incident energy of 1000 eV,well-ordered stripe-like nanostructures with a longitudinal height of 11.1 nm appear on the surface of the sapphire sample.As the incident energy increases,island-like nanostructures gradually appear on the surface of the substrate.When the incident energy is 1200 eV,island-like structures and ripple generate on the substrate,with a longtidudinal height of 13.6 nm.With an increase of the incident energy,the density of island-like structures enhances.When the incident energy is 1400 eV,the longitudinal height of island-like nanostructures is 18.8 nm.When the incident energy is 1600 eV,the surface of the sapphire sample appears a relatively ordered island-like structure with a longitudinal height of 20.1 nm.During the ion beam sputtering process,with an increase of the incident energy,metal impurities break the balance between the surface growth mechanism and the surface smoothing mechanism,which form island-like nanostructures,these structures promote the growth of nanostructures and change the orderliness of nanostructures.
Keywords:Self-orgsnized nanostructures  Low energy Ar+ion beam  Impurity co-deposition  Island nanostructure  Sapphire  Surface morphology
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