Comparison of growth methods for Si/SiO2 nanostructures as nanodot hetero-emitters for photovoltaic applications |
| |
Authors: | Maurizio Roczen Enno Malguth Martin Schade Andreas Schöpke Abdelazize Laades Michael Blech Orman Gref Thomas Barthel Jan Amaru Töfflinger Manfred Schmidt Hartmut S. Leipner Lars Korte Bernd Rech |
| |
Affiliation: | 1. Helmholtz-Zentrum Berlin (HZB), Institute of Silicon Photovoltaics, Kekuléstrasse 5, 12489 Berlin, Germany;2. Martin-Luther-Universität Halle-Wittenberg, Interdisziplinäres Zentrum für Materialwissenschaften, 06099 Halle, Germany;3. CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH Konrad-Zuse-Str. 14, 99099 Erfurt, Germany |
| |
Abstract: | Two different growth mechanisms are compared for the fabrication of Si/SiO2 nanostructures on crystalline silicon (c-Si) to be used as hetero-emitter in high-efficiency solar cells: (1) The decomposition of substoichiometric amorphous SiOx (a-SiOx) films with 0 < x < 1.3 and (2) the dewetting of thin amorphous silicon (a-Si) layers.The grown layers are investigated with regard to their structural properties, their passivation quality for c-Si wafer substrates and their electrical properties in order to evaluate their suitability as a nanodot hetero-emitter. While by layer decomposition, no passivating nanodots could be formed, the dewetting process allows fabricating nanodot passivation layers at temperatures as low as 600 °C. The series resistance through Ag/[Si-nanodots in SiO2]/c-Si/Al structures for dewetting is similar to nanostructured silicon rich SiOx films. Still, a nanodot hetero-emitter which exhibits both a satisfying passivation of the substrate and induces a high band bending by doping at the same time could not be fabricated yet. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |
|