Ab initio computer simulation of adsorption of a Fe monolayer on Si(111) |
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Authors: | A A Alekseev I A Kuyanov and A V Zotov |
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Institution: | 1.Institute of Automation and Control Processes, Far East Division,Russian Academy of Sciences,Vladivostok,Russia;2.Far East State University,Vladivostok,Russia |
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Abstract: | Computer simulation of adsorption of an Fe monolayer on Si(111) is carried out in the generalized gradient approximation in
the density functional theory. It is shown that mixing of Fe and Si atoms followed by the replacement of Si atoms and the
formation of a silicide-like film containing two types of domains (with the A8 and B8 structure) takes place in the course of deposition. Analysis of the atomic structure of this compound shows that the formation
of this interface makes it possible to obtain an FeSi film (with the CsCl-type structure) as well as FeSi2 film (with a CaF2-type structure). |
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