首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Ab initio computer simulation of adsorption of a Fe monolayer on Si(111)
Authors:A A Alekseev  I A Kuyanov and A V Zotov
Institution:1.Institute of Automation and Control Processes, Far East Division,Russian Academy of Sciences,Vladivostok,Russia;2.Far East State University,Vladivostok,Russia
Abstract:Computer simulation of adsorption of an Fe monolayer on Si(111) is carried out in the generalized gradient approximation in the density functional theory. It is shown that mixing of Fe and Si atoms followed by the replacement of Si atoms and the formation of a silicide-like film containing two types of domains (with the A8 and B8 structure) takes place in the course of deposition. Analysis of the atomic structure of this compound shows that the formation of this interface makes it possible to obtain an FeSi film (with the CsCl-type structure) as well as FeSi2 film (with a CaF2-type structure).
Keywords:
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号