Perhydridosilicone films produced by IR laser‐induced chemical vapour deposition from disiloxane

Solid perhydridosilicone films have been produced by transversely excited atmospheric (TEA) and continuous‐wave CO₂ laser‐induced gas‐phase decompositions of H₃SiOSiH₃ controlled by elimination and polymerization of transient silanone H₂SiO and affording silane and hydrogen as side products. The decomposition mechanism is supported by evidence of scavenged intermediates and minor volatile products. The films are characterized by FT infrared and x‐ray photoelectron spectroscopy and by scanning electron microscopy and shown to undergo facile oxidation of the topmost layers in air and chemical changes upon argon ion sputtering. Copyright © 2000 John Wiley & Sons, Ltd.