| 短波长相变光盘记录介质Ge2Sb2Te5薄膜的制备及静态性能研究 |
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| 引用本文： | 刘超,姜复松.短波长相变光盘记录介质Ge2Sb2Te5薄膜的制备及静态性能研究[J].光学学报,1996,16(10):471-1474. |
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| 作者姓名： | 刘超 姜复松 |
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| 作者单位： | 中国科学院上海光学精密机械研究所 |
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| 摘 要： | 研究了６３２．８ｎｍ波长下适用的相变光盘介质Ｇｅ２Ｓｂ２Ｔｅ５薄膜的制备方法和静态光存诸记录特性，发现该薄膜可在１００ｎｓ条件下实现直接重写，在优化膜层结构后，写擦循环次数高达１０＾６，反射率对比度在１５％以上。
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| 关 键 词： | 短波长相变材料 薄膜 静态性能 光盘 锗锑碲 |
| 收稿时间： | 1995/8/15 |
Preparation and Static Property Study of Phase Change Thin Film Ge 2Sb 2Te 5 in the Short Wavelength Region |
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| Liu Chao,Jiang Fusong,Jiang Moguang Pu Huiping,Men Liqiu.Preparation and Static Property Study of Phase Change Thin Film Ge 2Sb 2Te 5 in the Short Wavelength Region[J].Acta Optica Sinica,1996,16(10):471-1474. |
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| Authors: | Liu Chao Jiang Fusong Jiang Moguang Pu Huiping Men Liqiu |
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| Abstract: | The preparation method and stalic property of phase change optical storage Ge 2Sb 2Te 5 thin film have been analysed. After measuring its static properties, we found that the Ge 2Sb 2Te 5 film can be written and erased within 100 ns. Through multilayer design, the write/erase cycle numbers can be as high as 10 6, and the reflectivity contrast is above 15% |
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| Keywords: | short wavelength phase change media Ge 2Sb 2Te 5 thin film static property |
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