| 高多孔度多孔硅自支撑膜的制备与表征 |
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| 引用本文： | 徐东升,郭国霖,桂琳琳,张伯蕊,秦国刚.高多孔度多孔硅自支撑膜的制备与表征[J].物理化学学报,1998,14(7):577-580. |
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| 作者姓名： | 徐东升 郭国霖 桂琳琳 张伯蕊 秦国刚 |
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| 作者单位： | College of Chemistry and Molecular Engineering,Peking University;Department of Physics,Peking University,Beijing 100871 |
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| 摘 要： | 发光多孔硅由于在光电子学方面的应用前景而引起人们极大的关注1]．最近多孔硅发光二极管的研究方面取得了重大进展2]。但是，有关多孔硅的发光机制仍然存在着争论1，3，4]，利由于消除了单晶硅衬底的影响，对脱离了硅衬底的多孔硅自支撑膜能够进行普通多孔硅所不能进行的一
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| 关 键 词： | 多孔硅 自支撑膜 高多孔度 光致发光 |
| 收稿时间： | 1998-03-12 |
| 修稿时间： | 1998-04-15 |
Preparation and Characterization of Free-standing Porous Silicon Films with High Porosity |
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| Xu Dongsheng,Guo Guolin,Gui Linlin,Zhang Bairui, Qin Guogang.Preparation and Characterization of Free-standing Porous Silicon Films with High Porosity[J].Acta Physico-Chimica Sinica,1998,14(7):577-580. |
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| Authors: | Xu Dongsheng Guo Guolin Gui Linlin Zhang Bairui Qin Guogang |
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| Institution: | College of Chemistry and Molecular Engineering,Peking University;Department of Physics,Peking University,Beijing 100871 |
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| Abstract: | We have obtained free-standing porous silicon filrns with porosity above 90% by us-ing allodic oxidizing, electropolishing, chemical etching and supercritical drying methods. Thesehighly porous films exhibited near 100% transmission in the near infrared and strong photoluminescence (PL). The porosity of these films increased with prolonging the time of chen1ical etching.Meanwllile, the blueshift of the optical transmission curves and the increasing of the PL intensitywas ohserved. However, there is no clear size dependence of the peak ellergy of the PL. |
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| Keywords: | Porolls silicon Free-standing films High porosity Photoluminescence |
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