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Oxide aperture scaling effect on high-speed (>16 GHz) vertical-cavity surface-emitting lasers performance
Authors:AN AL-Omari  
Institution:aElectronics Engineering Department, Hijjawi Faculty for Engineering Technology, Yarmouk University, Irbid 21163, Jordan
Abstract:High-speed, oxide-confined, polyimide-planarized 850 nm vertical-cavity surface-emitting lasers (VCSELs) with oxide aperture diameters of 9, 10, 12, 15, 20, and 30 μm have been fabricated and characterized. For a 9 μm oxide aperture diameter, the lasers exhibit a resonance frequency, a 3-dB modulation frequency, and a modulation current efficiency factor (MCEF) up to 12.4, 16.5 GHz, and 10.9 GHz/mA1/2, respectively, at only 7.9 kA/cm2. Threshold voltage and current were 1.45 V and 0.7 mA, respectively. It is demonstrated that increasing the resonance frequency with bias does not guarantee a higher modulation bandwidth. The influence of oxide aperture scaling effect on VCSEL performance is presented.
Keywords:Semiconductor laser diodes  VCSEL modulation bandwidth  VCSEL resonance frequency
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