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Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes |
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| Authors: | Zhang Yang Han Chun-Lin Gao Jian-Feng Zhu Zhan-Ping Wang Bao-Qiang Zeng Yi-Ping |
| Affiliation: | Novel Materials laboratory，Institute ofSemiconductors,Chinese Academy of Science, Beijing 100083, China; State Key laboratory of Monolithic Integrated Circuit andModules, Nanjing Electronic Devices Institute, CETC, Nanjing 210016, China; State Key laboratory of Monolithic Integrated Circuit andModules, Nanjing Electronic Devices Institute, CETC, Nanjing 210016, China |
| Abstract: | This paper investigates the dependence of current--voltagecharacteristics of AlAs/Insub>0.53Ga0.47As/InAs resonanttunnelling diodes (RTDs) on spacer layer thickness. It finds that thepeak and the valley current density J in the negative differentialresistance (NDR) region depends strongly on the thickness of thespacer layer. The measured peak to valley current ratio of RTDsstudied here is shown to improve while the current density throughRTDs decreases with increasing spacer layer thickness below acritical value. |
| Keywords: | resonant tunnelling diode molecular beam epitaxy |
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