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Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes |
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| Authors: | Zhang Yang Han Chun-Lin Gao Jian-Feng Zhu Zhan-Ping Wang Bao-Qiang and Zeng Yi-Ping |
| Institution: | Novel Materials laboratory，Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China; State Key laboratory of Monolithic Integrated Circuit and Modules, Nanjing Electronic Devices Institute, CETC, Nanjing 210016, China; State Key laboratory of Monolithic Integrated Circuit and Modules, Nanjing Electronic Devices Institute, CETC, Nanjing 210016, China |
| Abstract: | This paper investigates the dependence of current--voltage characteristics of AlAs/Insub>0.53Ga0.47As/InAs resonant tunnelling diodes (RTDs) on spacer layer thickness. It finds that the peak and the valley current density J in the negative differential resistance (NDR) region depends strongly on the thickness of the spacer layer. The measured peak to valley current ratio of RTDs studied here is shown to improve while the current density through RTDs decreases with increasing spacer layer thickness below a critical value. |
| Keywords: | resonant tunnelling diode molecular beam epitaxy |
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