Controllable growth and characterizations of hybrid spiral-like atomically thin molybdenum disulfide |
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| Affiliation: | 1. Institute of Super Microstructure and Ultrafast Process in Advanced Materials, College of Physics and Electronics, Central South University, 605 South Lushan Road, Changsha 410012, PR China;2. Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha 410012, PR China;3. Department of Physics and Astronomy, University of Rochester, Rochester, NY 14534, USA;1. Department of Optics and Spectroscopy, Voronezh State University, Voronezh 394006, Russia;2. B.I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk 220072, Belarus;3. P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow 119991, Russia;1. Physics Department, Faculty of Science and Science Education, School of Science, University of Sulaimani, Kurdistan Region, Iraq;2. Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik, Iceland;3. Department of Mechanical Engineering, National United University, 1, Lienda, Miaoli 36003, Taiwan;4. School of Science and Engineering, Reykjavik University, Menntavegur 1, IS-101 Reykjavik, Iceland;1. Physics Department, Belarusian State University, pr. Nezavisimosti 4, Minsk 220030, Belarus;2. Institute for Spectroscopy Russian Academy of Science, Fizicheskaya Str. 5, Troitsk, 142190 Moscow, Russia;3. Moscow Institute of Physics and Technology, Institutskii pereulok 9, Dolgoprudny, 141700 Moscow region, Russia;1. Department of Mechanical Engineering, Najafabad Branch, Islamic Azad University, Najafabad, Iran;2. Shahrekord University, Faculty of Engineering, P.O. Box 115, Shahrekord, Iran;1. College of Materials Science and Engineering, China Jiliang University, Hangzhou 310018, China;2. College of Optical and Electronic technology, China Jiliang University, Hangzhou, 310018, China |
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| Abstract: | Monolayer MoS2 is an emerging two-dimensional semiconductor with wide-ranging potential applications in novel electronic and optoelectronic devices. Here, we reported controlled vapor phase growth of hybrid spiral-like MoS2 crystals investigated by multiple means of X-Ray photoemission spectroscopy, scanning electron microscopy, atomic force microscopy, kelvin probe force microscopy, Raman and Photoluminescence techniques. Morphological characterizations reveal an intriguing hybrid spiral-like MoS2 feature whose lower planes are AB Bernal stacking and upper structure is spiral. We ascribe the hybrid spiral-like structure to a screw dislocation drive growth mechanism owing to lower supersaturation and layer-by-layer growth mode. In addition, the electrostatic properties of MoS2 microflakes with hybrid spiral structures are obvious inhomogeneous and dependent on morphology manifested by kelvin probe force microscopy. Our work deepens the understanding of growth mechanisms of CVD-grown MoS2, which is also adoptable to other TMDC materials. |
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| Keywords: | Two dimensional materials Chemical vapor deposition Screw dislocation drive Surface potential |
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