Control of the binding energy by tuning the single dopant position,magnetic field strength and shell thickness in ZnS/CdSe core/shell quantum dot |
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| Affiliation: | 1. Groupe d''Optoélectronique des Boites Quantiques de Semiconducteurs, Ecole Normale Supérieure de l''Enseignement Technique, Mohamed V University, Rabat, Morocco;2. Laboratoire Optoélectronique et Physico-chimie des Matériaux, Faculté des Sciences, Université Ibn Tofail, Kenitra, Morocco;3. Centre Régional des Métiers de l''Education et de Formation (CRMEF), Tanger, Morocco;4. Laboratory of Condensed Matter, Faculty of Sciences and Techniques, University of Hassan II, Mohammedia, Morocco;5. LCP-A2MC, Université de Lorraine, Metz, France;6. Laboratoire d''Electronique et Optique des Nanostructures de Semiconducteurs, Faculté des Sciences, Université chouaib doukali, El Jadida, Morocco;1. Department of Physics, Fatima College, Madurai 625018, India;2. Department of Physics, Government Arts College, Melur 625109, Madurai, India;3. Department of Chemical Engineering, College of Engineering, Kyung Hee University, 1732 Deogyeong-daero, Gihung, Yongin, Gyeonggi 446-701, South Korea;1. Department of Physics, “Politehnica” University of Bucharest, 313 Splaiul Independenţei, Bucharest RO-060042, Romania;2. Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombia;1. Russian-Armenian University, 123 Hovsep Emin Str., Yerevan 0051, Armenia;2. Yerevan State University, Centre of Quantum Technologies and New Materials, A. Manoogian 1, 0025 Yerevan, Armenia;3. Peter The Great Saint-Petersburg Polytechnical University, Polytechnicheskaya 29, St.Petersburg 195251, Russia;4. National Laboratory after A. I. Alikhanyan, 2 A. Alikhanian Brothers Street, 0036 Yerevan, Armenia;1. Department of Physics, College of Sciences, Tehran Science and Research Branch, Islamic Azad University, Tehran, Iran;2. Department of Physics, College of Sciences, Yasouj University, Yasouj 75914-353, Iran |
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| Abstract: | Recently, the new tunable optoelectronic devices associated to the inclusion of the single dopant are in continuous emergence. Combined to other effects such as magnetic field, geometrical confinement and dielectric discontinuity, it can constitute an approach to adjusting new transitions. In this paper, we present a theoretical investigation of magnetic field, donor position and quantum confinement effects on the ground state binding energy of single dopant confined in ZnS/CdSe core/shell quantum dot. Within the framework of the effective mass approximation, the Schrödinger equation was numerically been solved by using the Ritz variational method under the finite potential barrier. The results show that the binding energy is very affected by the core/shell sizes and by the external magnetic field. It has been shown that the single dopant energy transitions can be controlled by tuning the dopant position and/or the field strength. |
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| Keywords: | Single dopant Core-shell Quantum dots Magnetic field Donor Binding energy Impurity |
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