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Mechanism for CuPt-type ordering in mixed III–V epitaxial layers
Authors:B. A. Philips   A. G. Norman   T. Y. Seong   S. Mahajan   G. R. Booker   M. Skowronski   J. P. Harbison  V. G. Keramidas
Affiliation:

a Department of Materials Science, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA

b Department of Materials, University of Oxford, Oxford OX1 3PH, UK

c Bellcore, Red Bank, New Jersey 07701, USA

Abstract:
A model is proposed to rationalize the occurence of CuPt-type ordering in mixed III–V epitaxial layers grown on (001) substrates. It is invoked that 2× surface reconstruction occuring on group V terminated (001) surfaces produces dilated and compressed regions in sub-surface layers. The presence of these regions biases the occupation of certain sites during the growth of a layer consisting of atoms differing in their tetrahedral radii. By assuming that the reconstruction always occurs at the growing surface, it is possible to explain the evolution of CuPt-type ordering in epitaxial layers. Also, based on the model, experimental observations pertaining to the influence of growth conditions, surface misorientation and steps on ordering can be rationalized.
Keywords:
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