Low temperature subband 2D electron mobilities in heavy delta- and modulation doped GaAs/GaAlAs heterostructures |
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| Authors: | Vladimir A Kulbachinskii Roman A Lunin Vladimir G Kytin Alexandr S Bugaev Alexei P Senichkin Anne de Visser |
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| Institution: | 1.Low Temperature Physics Department,Moscow State University,Moscow,Russia;2.Van der Waals-Zeeman Institute,University of Amsterdam,Amsterdam,The Netherlands |
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| Abstract: | We synthesised high-2D electron-density GaGs/GaAlAs heterostructures with different distance Lσ of Si delta-layer in GaAs from the heterojunction and uniform doped GaAlAs. The quantum Hall effect and Shubnikov-de Haas effect were measured for temperatures down to 0.4 K in magnetic fields up to 40 T. The enhanced 2D electron concentration achieved was 1.1*1013 cm?2 in six filled subbands. The Hall mobility depends on Lσ and has maximum for Lσ=600÷750Å. From the amplitudes of the SdH oscillations and Fourier transforms the subband mobilities and electron concentration in each subband have been extracted. According to calculations intersubband electron scattering appears to be important and reduces mobilities in subbands. |
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