A new critical point in the non-linear conductivity due to variable range hopping in Si |
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| Authors: | P Stefanyi C C Zammit P Fozooni M J Lea G Ensell |
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| Institution: | 1.Department of Physics, Royal Holloway,University of London,Egham,UK;2.Department of Electronics and Computer Science,University of Southampton,Southampton SO17 1BJ,UK |
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| Abstract: | A critical point in the non-linear conductivity has been observed in epitaxial silicon in the variable range hopping regime, due to a negative differential resistance with a dc bias currentI dc. This gives thermal breakdown via the electron-phonon coupling and circuit-limited oscillations with a frequencyf∝I dc, below a critical temperatureT c. This critical behaviour is intrinsic, and forR(T)=R 0 exp(T 0 /T)1/2 we show thatT c=0.00512T 0. |
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