Enhanced photocatalytic activity of SiC modified by BiVO4 under visible light irradiation |
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| Authors: | Jingjing Yang Yuan Peng |
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| Affiliation: | 1. Department of Environmental Quality Inspection, Chongqing Chemical Industry Vocational College, Chongqing, China;2. Chongqing Key Laboratory of Extraordinary Bond Engineering and Advanced Materials Technology, Yangtze Normal University, Chongqing, China |
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| Abstract: | SiC-BiVO4-P and SiC-BiVO4-H composites have been prepared by precipitation method and hydrothermal method, respectively. Rod-like BiVO4 particles dispersed on the surface of micro-sized SiC particles homogeneously in SiC-BiVO4-H. Due to the formed heterostructure between BiVO4 and SiC, photo-generated electrons and holes were effectively separated. Under visible light irradiation, SiC-BiVO4-H exhibited the best performance for photocatalytic oxidation of Rhodamine B, achieved about 7.5 times improvement in photocatalytic degradation rate constants compared with that of the pristine SiC powder. The possible photocatalysis mechanism of SiC/BiVO4 related to the band positions of the semiconductors under visible light irradiation was also discussed in detail. In addition, the radicals trapping experiments revealed that all three radicals (holes, OH, and O2?) play an important role in the Rhodamine B degradation. |
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| Keywords: | BiVO4 heterostructure RhB SiC visible light |
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