Spin-polarized transport through a time-periodic non-magnetic semiconductor heterostructure |
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Authors: | K Gnanasekar K Navaneethakrishnan |
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Institution: | (1) The American College, Madurai, 625002, India;(2) School of Physics, Madurai-Kamaraj University, Madurai, 625021, India |
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Abstract: | Spin-dependent Floquet scattering theory is developed to investigate the
photon-assisted spin-polarized electron transport through a semiconductor
heterostructure in the presence of an external electric field.
Spin-dependent Fano resonances and spin-polarized electron transport through
a laser irradiated time-periodic non-magnetic heterostructure in the
presence of Dresselhaus spin-orbit interaction and a gate-controlled Rashba
spin-orbit interaction are investigated. The electric field due to laser
along with the spin-orbit interactions help to get spin-dependent Fano
resonances in the conductance, whereas the external bias can be
appropriately adjusted to get a near 80% spin-polarized electron
transmission through heterostructures. The resultant nature of the Floquet
scattering depends on the relative strength of these two electric fields. |
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Keywords: | 85 75 Mm Spin polarized resonant tunnel junctions 72 20 -i Conductivity phenomena in semiconductors and insulators 73 40 Gk Tunneling 73 63 Hs Quantum wells |
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