Bismuth Nanoparticles@Porous Silicon Nanostructure,Application as a Selective and Sensitive Electrochemical Sensor for the Determination of Thioridazine

A bismuth@porous silicon (Bi/PSi) nanostructure is fabricated and used as a new highly sensitive electrochemical sensor for measurement of thioridazine. For this purpose, commercial silicon powder is converted to porous silicon using metal‐assisted chemical etching method. Then, bismuth nanoparticles are deposited on the surface of the porous silicon that synthesized in the previous step. The effects of pH and instrumental parameters are studied on the sensor response. After optimization of the parameters, differential pulse voltammetry is used to determine sub‐micro molar amounts of thioridazine. The Linear region of the electrochemical sensor is in the range of 0.1 to 260 μmol L⁻¹ thioridazine with a detection limit of 0.03 μmol L⁻¹, when Bi/PSi/CNTPE is used as an electrochemical sensor. The precision and accuracy of the sensor is evaluated. The Bi/PSi/CNTPE is used as an appropriated tool for accurate measurement of low amounts of thioridazine in real samples with satisfactory results.