MOVPE Growth and Fabrication of 1.3μm High Power InGaAsP-InP Polarization-Insensitive Superluminescent Diodes with Complex Strained Quantum Wells |
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Authors: | Ma Hong Chen Sihai Yi Xinjian Zhu Guangxi Jin Jinyan |
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Institution: | (1) Department of Optoelectronics Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P.R. China;(2) Department of Electronics and Information Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P.R. China;(3) Department of Physics, Wuhan University, Wuhan, 430072, P.R. China |
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Abstract: | High power polarization-insensitive InGaAsP-InP multiple quantum well (MQW) superluminescent diodes (SLD's) emitting at 1.3μm
were investigated. A combination of tensile strained and compressively strained quantum wells called complex strained MQW
were used in a single active layer in order to obtain polarization insensitivity. Low-pressure metalorganic chemical vapor
phase epitaxy was used for crystal growth. High resolution X-ray diffraction and photoluminescence spectra showed excellent
crystal quality. The SLD's were fabricated to ridge waveguide structure with 7° tilted cavity, the two facets were coated
with two layers anti-reflection TiO2/SiO2 films, residual facet reflectivity was found to be less than 0.04%. The SLD's exhibited a up to 18.8 mW optical output power
and less than 1 dB polarization dependence of output power with a less than 0.5 dB optical spectra modulation at 250 mA. |
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Keywords: | polarization-insensitive multi-quantum-well superluminescent diodes optical spectra modulation InGaAsP— InP |
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