Electro-physical properties of cadmium-silicon diarsenide irradiated by H+ ions

The effect of proton irradiation (E = 5 MeV, D = 2 · 10¹⁷ cm⁻²) on electro-physical properties of p-CdSiAs ₂ crystals is studied. The irradiation resulted in semi-insulating CdSiAs ₂ samples with the Fermi-level position in the proximity of E_g/2. The energy position of a “neutral” point is calculated for CdSiAs ₂, and thermal stability of radiation defects is investigated. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 12–15, August, 2007.