Growth and characterization of Nd:Bi12SiO20 single crystal |
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| Authors: | Honghao Xu Yuanyuan Zhang Huaijin Zhang Haohai Yu Zhongben Pan Yicheng Wang Shangqian Sun Jiyang Wang RI Boughton |
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| Institution: | 1. Department of Polymer Materials, School of Materials Science and Engineering, Shanghai University, Shanghai 200444, PR China;2. Sino-European School of Technology of Shanghai University, Shanghai 200444, PR China;3. Laboratory for Microstructure, Shanghai University, Shanghai 200444, PR China;4. Technology University of Belfort-Montbeliard, Belfort 90010, France;5. Institute of Materials, School of Materials Science and Engineering, Shanghai University, Shanghai 200072, PR China |
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| Abstract: | A Nd:Bi12SiO20 crystal was grown by the Czochralski method. The thermal properties of the crystal were systematically studied. The thermal expansion coefficient was measured to be α=11.42×10?6 K?1 over the temperature range of 295–775 K, and the specific heat and thermal diffusion coefficient were measured to be 0.243 Jg?1 k?1 and 0.584 mm2/s, respectively at 302 K. The density was measured to be 9.361 g/cm3 by the buoyancy method. The thermal conductivity of Nd:Bi12SiO20 was calculated to be 1.328 Wm?1 K?1 at room temperature (302 K). The refractive index of Nd:Bi12SiO20 was measured at room temperature at eight different wavelengths. The absorption and emission spectra were also measured at room temperature. Continuous-wave (CW) laser output of a Nd:Bi12SiO20 crystal pumped by a laser diode (LD) at 1071.5 nm was achieved with an output power of 65 mW. To our knowledge, this is the first time LD pumped laser output in this crystal has been obtained. These results show that Nd:Bi12SiO20 can serve as a laser crystal. |
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