Improvement of polarization extinction in silicon waveguide devices |
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Authors: | GR Bhatt BK Das |
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Institution: | 1. Anhui Atmospheric Observation and Technical Support Center, Hefei 230031, China;2. Key Laboratory of Geospace Environment, Chinese Academy of Sciences, University of Science and Technology of China, Hefei 230026, China;3. Anhui Institutes of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031, China |
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Abstract: | The SOI based waveguide devices are found to be highly polarization sensitive. Unwanted polarization excitations can be attenuated by integrating a TE- or TM-pass polarizer. A large attenuation of TM-polarized light has been observed when a thin film of metal is coated on the top of silicon rib waveguide, while TE-polarized light remains almost unaffected. The attenuation of TM-polarized light is attributed to the plasmonic absorption of the evanescent field in the metal cladding. Typically, with an Al cladding of thickness ~ 100 nm and a length of 1 mm on top of a single-mode (λ ~ 1550 nm) SOI rib waveguide structure, TE vs TM extinction ratio of ~ 15 dB has been obtained. Integrating such waveguide polarizers in a directional coupler and MZI based DWDM channel interleaver, we have also achieved an improvement in polarization extinction by ~ 15 dB. |
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