Measurement of optical and surface properties of PLZT thin films |
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| Authors: | Jing-Fung Lin Jiann-Shing Jeng Wen-Ruey Chen Bing-Hsun Wu |
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| Institution: | 1. Department of Computer Application Engineering, Far East University, Taiwan, ROC;2. Department of Material Science and Engineering, Far East University, Taiwan, ROC;3. Department of Energy Application Engineering, Far East University, Taiwan, ROC;4. Graduate School of Mechanical Engineering, Far East University, Taiwan, ROC |
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| Abstract: | Lanthanum-modified lead zirconate titanate (Pb0.93La0.07(Zr0.3Ti0.7)0.93O3, PLZT7/30/70) thin films with and without a seeding layer of PbTiO3 (PT) were successfully deposited on indium-doped tin oxide (ITO) coated glass substrate via spin coating in conjunction with a sol–gel process, and a top transparent conducting thin film of SnO2 was also prepared in the same way. The thicknesses of PLZT and PT layers are 0.5 μm and 24 nm, respectively. The retardance of PLZT film was measured by a new heterodyne interferometer and enhanced by application of a seeding layer of PT. The Pockels linear electro-optical coefficient of PLZT film with a PT layer was determined to be 3.17 × 10?9 m/V when the refractive index is considered as 2.505, which is one order larger than 1.4 × 10?10 m/V for PLZT12/40/60 doped with Dy reported in the literature. The root-mean-square (rms) roughness of PLZT thin film with a PT layer (Rrms = 6.867 nm) was larger than that of PLZT film (Rrms = 0.799 nm). From the comparisons, the average transmittance of PLZT film with a PT seeding layer was 77.01%, which was a little smaller than that of PLZT film (around 80.75%). Experimental results imply that the PT seeding layer plays a key role in the increase of retardance value, leading to a higher Pockels coefficient. |
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