Two photon absorption characteristics of bulk GaTe crystal |
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| Authors: | Mustafa Yüksek Hüseyin Ertap Ayhan Elmali H Gul Yaglioglu Gasan M Mamedov Mevlüt Karabulut Mustafa K Öztürk |
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| Institution: | 1. Department of Physics, Science and Art Faculty, Kafkas University, 36100 Kars, Turkey;2. Department of Engineering Physics, Faculty of Engineering, Ankara University, 06100 Ankara, Turkey;3. Department of Physics, Science Faculty, Gazi University, 06100 Ankara, Turkey |
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| Abstract: | We have investigated the structural and optical properties of bulk GaTe crystal grown by vertical Bridgman method. Two photon absorption (TPA) properties of GaTe crystal have been investigated by the open aperture Z-scan technique under 1064 nm wavelength with 4 ns or 65 ps pulse durations. The TPA coefficients are greater in ns regime than that of ps regime. Upon increasing intensity of incident light from 5.02×107 W/cm2 to 1.07×108 W/cm2, the TPA coefficients increased from 3.47×10?6 cm/W to 8.53×10?6 cm/W for nanosecond excitation. Similarly, when intensity of incident light was increased from 6.81×108 W/cm2 to 9.94×108 W/cm2 the TPA coefficients increased from 3.53×10?7 cm/W to 6.83×10?7 cm/W for picosecond excitation. Measured TPA coefficient of GaTe crystal is larger than that of GaSe and GaS layered crystals. |
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