Crystallographic orientation-dependent optical properties of GaInSb mid-infrared quantum well laser

The optical properties of compressively strained GaInSb/GaInAlSb quantum well (QW) laser are numerically studied in different crystal orientations solving envelope function equation using finite difference method. The simulation results demonstrate that there is a strong correlation between the optical gain and its emission wavelength with crystal orientation of the QW. The maximum and minimum optical gains are evaluated in the (1 1 3) and (1 1 1) crystal orientations, respectively, due to band mixing effects. The peak emission wavelength can be tuned from 2.4 μm to 2.25 μm by changing the crystal orientation from (1 1 0) to (1 1 1). Typical optical gains are evaluated 3115, 3080, 2790, 3415, and 2940 cm^?1 in (0 0 1), (1 1 0), (1 1 1), (1 1 3), and (1 3 1) crystal orientations, respectively, when the injection carrier density is 3.5 × 10¹⁸ cm^?3. The highest optical power and lower threshold current are obtained in (1 1 3) orientation for the number of quantum wells three.