| Abstract: | Photoelectric properties of pure and Al doped vacuum deposited CdS films have been studied to explore the possibility of their
application in photoactivated liquid crystal light valves. The effect of heat treatment in oxygen atmosphere, rate of deposition
and the extent of Al doping, etc. on the resistivity, photo-response spectral characteristics, rise and decay time of photo-current,
etc. have been investigated. It has been found that in contrast to pure CdS films, the properties of Al-doped films significantly
depend on both the rate of deposition and the extent of Al doping. The dark resistivity in all cases was found to increase
with heat treatment in oxygen. Unlike pure CdS films, Al doped films show photo-conductivity which is enhanced by heat treatment.
Al doped films deposited at higher rates show better photo response even at lower light levels. At various light levels the
rise and decay time of Al-doped films were found to be fairly constant and lower than that for pure CdS films. All these properties
have been explained in terms of the presence of trapping levels due to doping. These trapping levels are also indicated by
TSC, optical absorption and EPR studies. |
