铝热反应法制备双股类螺旋Zn2SnO4单晶纳米带

综合利用化学气相沉积、铝热反应法、汽-液-固生长法、极性面融合和稳态湍流动力学控制来大量制备双股类螺旋Zn₂SnO₄单晶纳米带. 该材料属于面心立方尖晶石型透明半导体, 在光伏器件和湿度与可燃气体传感器中有着广泛的应用. 扫描电镜、透射电镜、电子衍射、X射线衍射、拉曼光谱以及光发射等技术分析表明所得的双股类螺旋纳米带是由两个独立的Zn₂SnO₄纳米带通过扭曲纠缠和融合而成. 该双股类螺旋纳米带实际上是在轴向具有周期性的超晶格材料. 光致发光测量表明该纳米带在326.1 nm处出现强发射峰, 线宽约为1.5nm. 本研究所采用的综合制备法中的铝热反应法和稳态湍流微扰法可能有助于类似材料的控制制备.

Bifilar Helix-Like Nanobelt of Single Crystalline Zn2SnO4 Fabricated by Aluminothermal Reaction Approach

This paper reports the preparation in large quantity of bifilar helix-like nanobelts of single crystalline Zn₂SnO₄, a face-centered cubic spinel and transparent semiconductor that possesses wide applications in photovoltaic devices and sensors for humidity and combustible gases, by using a unique approach that combines chemical vapor deposition, aluminothermal reaction, vapor-liquid-solid growth, mergence of polar planes, and kinetic control by steady-state turbulent flow. The bifilar helix-like nanobelt was formed by the twisting and merging of two independent Zn₂SnO₄ nanobelts, as analyzed by scanning electron microscopy, transmission electron microscopy, electron diffraction, X-ray diffraction, Raman spectroscopy, and photoluminescence. It had a periodicity along the axial direction and hence, is actually a super-lattice material. The photoluminescence measurements showed a strong light emission at 326.1 nm from the as-prepared sample with a line width of about 1.5 nm. The combined approach used in this study, in particular its aluminothermal reaction and steady-state turbulent gas flow perturbation steps, may be helpful in preparing other similar materials.