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| Authors: | Zhan-Shuo Hu Fei-Yi Hung Shoou-Jinn Chang Kuan-Jen Chen Yi-Wei Tseng Bohr-Ran Huang Bo-Cheng Lin Wei-Yang Chou Jay Chang |
| Affiliation: | (1) Institute of Electro-Optical Science and Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, 701, Taiwan;(2) Institute of Nanotechnology and Microsystems Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, 701, Taiwan;(3) Institute of Microelectronics & Department of Electrical Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, 701, Taiwan;(4) Institute of Microelectronics, National Cheng Kung University, Tainan, 701, Taiwan;(5) Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei, 106, Taiwan;(6) Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei, 106, Taiwan; |
| Abstract: | The photo-current of n-ZnO/p-Si heterojunction photodiodes was improved by embedding Ag nanoparticles in the interface (ZnO/nano-PAg/p-Si), and the ratio between photo- and dark-current increased by about three orders more than that of a n-ZnO/p-Si specimen. The improvement in the photo-current resulted from the light scattering of embedded Ag nanoparticles. The I–V curve of n-ZnO/p-Si degraded after thermal treatment (A-ZnO/p-Si) because the silicon robbed the oxygen from ZnO to form amorphous silicon dioxide and left an oxygen vacancy. Notably, the properties of ZnO/nano-PAg/p-Si were better in the time-dependent photoresponse under 10 V bias. Ag nanoparticles (15–20 nm) scattered the UV light randomly and increased the probability for the absorption of ZnO to enhance the properties of the photodiode. |
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