Temperature-dependent photoluminescence of dimethylzinc-treated ZnSe/ZnS quantum dots |
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Authors: | Y.G. Kim K.S. Baek S.K. Chang |
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Affiliation: | 1. Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 133-791, Republic of Korea;2. Department of Molecular Science & Technology, Ajou University, Suwon 443-749, Republic of Korea |
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Abstract: | Temperature-dependent photoluminescence (PL) measurements were carried out ZnSe/ZnS quantum dots (QDs) grown with post-growth interruption under a dimethylzinc (DMZn) flow. The PL spectra showed sigmoidal peak shifts and V-shaped full width at half maximum (FWHM) variations with increasing temperature, which strongly suggest that the QD structure of ZnSe/ZnS is quite similar to that of other material systems grown in the Stranski–Krastanov mode. Apparent differences are revealed as a consequence of DMZn treatment: (i) the PL spectra of ZnSe/ZnS QDs showed peaks at higher energies and persisted up to 300 K, and(ii) the minimum points of the V-shaped FWHM appear at a higher temperature compared to H2-purged ZnSe/ZnS QDs. Experimental results demonstrate the enhancement of localization energy. |
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