Gauge fields,ripples and wrinkles in graphene layers |
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| Authors: | F. Guinea Baruch Horovitz P. Le Doussal |
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| Affiliation: | 1. Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, E-28049 Madrid, Spain;2. Department of Physics, Ben Gurion University, Beer Sheva 84105, Israel;3. CNRS-Laboratoire de Physique Théorique de l’Ecole Normale Supérieure, 24 rue Lhomond, 75231 Cedex 05, Paris, France;1. School of Engineering, Brown University, Providence, RI 02912, USA;2. Centre of Advanced Mechanics and Materials, Tsinghua University, Beijing 100084, People’s Republic of China;3. Applied Mechanics Laboratory, Department of Engineering Mechanics, Tsinghua University, Beijing 100084, People’s Republic of China;1. Department of Physics, National Cheng Kung University, Tainan 701, Taiwan;2. Department of Physics ROCMA, 830 Kaohsiung, Taiwan;3. National Center for High-Performance Computing, Taiwan;4. Department of Mechanical Engineering, Southern Taiwan University of Science and Technology, Taiwan;5. Department of Physics, National Sun Yat-Sen University, Taiwan;1. Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, E-28049 Madrid, Spain;2. Departamento de Física Teórica de la Materia Condensada, Universidad Autónoma de Madrid, E-28049 Madrid, Spain;3. Instituto de Ciencia de Materiales de Madrid (ICMM), CSIC, c/ Sor Juana Ines de la Cruz 3, E-28049 Madrid, Spain;4. Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, E-28049 Madrid, Spain;1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, People’s Republic of China;2. School of Physics and Optoelectronic Technology, Dalian University of Technology, 2 Linggong Road, Dalian 116024, People’s Republic of China;3. Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100 029, People’s Republic of China;1. Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, 28049, Madrid, Spain;2. Instituto de Ciencia de Materiales, CSIC, 28049, Madrid, Spain;3. Department of Physics, University of Manchester, M13 9PL, Manchester, UK;4. Instituto IMDEA Nanociencia, 28049, Madrid, Spain;5. Centro de Investigación de Física de la Materia Condensada, Universidad Autónoma de Madrid, 28049, Madrid, Spain |
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| Abstract: | ![]()
We analyze elastic deformations of graphene sheets which lead to effective gauge fields acting on the charge carriers. Corrugations in the substrate induce stresses which, in turn, can give rise to mechanical instabilities and the formation of wrinkles. Similar effects may take place in suspended graphene samples under tension. |
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