Observation of the surface circular photogalvanic effect in InN films |
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| Authors: | Z. Zhang R. Zhang Z.L. Xie B. Liu M. Li D.Y. Fu H.N. Fang X.Q. Xiu H. Lu Y.D. Zheng Y.H. Chen C.G. Tang Z.G. Wang |
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| Affiliation: | 1. Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics, Nanjing University, Nanjing 210093, China;2. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Academy of Science, Beijing 100085, China;1. School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471003, China;2. Institute of Fluid Physics, Chinese Academy of Engineering Physics, Mianyang 621900, China;1. National Institute for Materials Science, Tsukuba, Japan;2. Department of Applied Physics and Institute of Nanoscience and Biotechnology, Dankook University, Yongin, Republic of Korea;3. Device Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon, Republic of Korea;1. Research Chair of Exploitation of Renewable Energy Applications in Saudi Arabia, Physics & Astronomy, King Saud University, P.O. Box 2455, Riyadh 11451, Saudi Arabia;2. Department of Physics, Lesya Ukrainka Eastern European National University, 13 Voli Avenue, Lutsk 43025, Ukraine;3. Institute of Optoelectronics and Measuring Systems, Faculty of Electrical Engineering, Czestochowa University Technology, Armii Krajowej 17, PL-42-201 Czestochowa, Poland;4. Department of Inorganic and Physical Chemistry, Lesya Ukrainka Eastern European National University, 13 Voli Avenue, 43025 Lutsk, Ukraine;5. Department of Inorganic Chemistry, Ivan Franko National University of Lviv, Kyryla i Mefodiya St. 6, 79005 Lviv, Ukraine;6. Institute of Chemistry, Environmental Protection and Biotechnology, Jan D?ugosz University of Cz?stochowa, al. Armii Krajowej 13/15, 42200 Cz?stochowa, Poland;7. Institute of Physics, Jan D?ugosz University of Cz?stochowa, Armii Krajowej 13/15, 42-200 Czestochowa, Poland;1. College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, China;2. Key Lab of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China;3. College of Chemistry and Chemical Engineering, Taiyuan University of Technology, Taiyuan 030024, China;4. School of Energy and Power Engineering, Beihang University, Beijing 100191, China;5. Beijing Key Laboratory of Aero-Engine Structure and Strength, Beijing 100191, China |
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| Abstract: | ![]()
A sizable spin-dependent photocurrent related to the interband transition in InN films is observed. The surface charge accumulation layer is suggested to be the origin of the circular photogalvanic current, which is consistent with the result of uniaxial strain experiments and the comparison of front and back incidence. The homogeneous photocurrent demonstrates the existence of spin splitting in the InN surface layer, and the structure inversion asymmetry (SIA)-dominant mechanism indicates a great possibility for the manipulation of spin splitting, which would undoubtedly benefit further research and applications of spintronics. |
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