Resonance Raman scattering in graphene: Probing phonons and electrons |
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Authors: | L.M. Malard D.L. Mafra S.K. Doorn M.A. Pimenta |
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Affiliation: | 1. Universitat Politecnica de Catalunya, Barcelona, Spain;2. Barcelona Supercomputing Center, Barcelona, Spain;3. University of Padova, Padova, Italy;4. Cobham Gaisler, Gotemburg, Sweden;5. Rapita Systems Ltd, York, England;6. Spanish National Research Council (IIIA-CSIC), Barcelona, Spain |
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Abstract: | ![]() In this work, by using different laser excitation energies, we obtain important electronic and vibrational properties of mono- and bi-layer graphene. For monolayer graphene, we determine the phonon dispersion near the Dirac point for the in-plane transverse optical (iTO) mode. This result is compared with recent calculations that take into account electron–electron correlations for the phonon dispersion around the K point. For bilayer graphene we extract the Slonczewski–Weiss–McClure band parameters and compare them with recent infrared measurements. We also analyze the second-order feature in the Raman spectrum for trilayer graphene. |
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