Amorphous tungsten-doped In2O3 transparent conductive films deposited at room temperature from metallic target |
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Authors: | Jiahan Feng Ming Yang Guifeng Li Qun Zhang |
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Institution: | Department of Materials Science, Fudan University, 220 Handan Rd., Shanghai 200433, PR China |
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Abstract: | Amorphous tungsten-doped In2O3 (IWO) films were deposited from a metallic target by dc magnetron sputtering at room temperature. Both oxygen partial pressure and sputtering power have significant effects on the electrical and optical properties of the films. The as-deposited IWO films with the optimum resistivity of 5.8 × 10?4 Ω·cm and the average optical transmittance of 92.3% from 400 to 700 nm were obtained at a W content of 1 wt%. The average transmittance in the near infrared region (700–2500 nm) is 84.6–92.8% for amorphous IWO prepared under varied oxygen partial pressure. The mobility of the IWO films reaches its highest value of 30.3 cm2 V?1 s?1 with the carrier concentration of 1.6 × 1020 cm?3, confirming their potential application as transparent conductive oxide films in various flexible devices. |
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