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Pb(Zr,Sn,Ti)O3反铁电陶瓷场诱相变性能的改进
引用本文:刘 鹏,杨同青,徐 卓,张良莹,姚 熹.Pb(Zr,Sn,Ti)O3反铁电陶瓷场诱相变性能的改进[J].物理学报,2000,49(9):1852-1858.
作者姓名:刘 鹏  杨同青  徐 卓  张良莹  姚 熹
作者单位:(1)陕西师范大学物理系,西安 710062; (2)同济大学功能材料研究所,上海 200092; (3)西安交通大学电子材料研究所,西安 710049
摘    要:为了获得场诱反铁电(AFEt)—铁电(FE)相变临界电场Ef小、电滞ΔE小、场致应变x适当的反铁电陶瓷,对Pb(Zr, Sn, Ti)O3采用Ba 2+置换Pb2+,同时在四方反铁电相AFEt—三方铁电F E相界附近调节Ti/Sn比,来控制FE-AFEt,AFEt关键词: Pb(Zr Sn 3基反铁电陶瓷')" href="#">Ti)O3基反铁电陶瓷 场诱相变 场致应变 掺杂改性

关 键 词:Pb(Zr  Sn  Ti)O3基反铁电陶瓷  场诱相变  场致应变  掺杂改性
收稿时间:3/5/2000 12:00:00 AM

ELECTRIC FIELD INDUCED ANTIFERROELECTRIC TO FERROELECTRIC PHASE TRANSITION OF Pb (Zr,Sn,Ti)O3 CERAMICS AND TAILORING OF PROPERTIES THROUGH COMPOSITION MODIFICATION
LIU PENG,YANG TONG-QING,XU ZHUO,ZHANG LIANG-YING and YAO XI.ELECTRIC FIELD INDUCED ANTIFERROELECTRIC TO FERROELECTRIC PHASE TRANSITION OF Pb (Zr,Sn,Ti)O3 CERAMICS AND TAILORING OF PROPERTIES THROUGH COMPOSITION MODIFICATION[J].Acta Physica Sinica,2000,49(9):1852-1858.
Authors:LIU PENG  YANG TONG-QING  XU ZHUO  ZHANG LIANG-YING and YAO XI
Abstract:In order to obtain a new kind of antiferroelectric (AFEt) ceramics wi th lower AFEt-Ferroelectric (FER) switching field Ef< /sub> and less hysterisis loss ΔE for application of large displacement actuato r, Ba2+ ionics was employed to control the relative stability between AFEt, FER, and parroelelctrics (PEc) phases in (Pb097-xBaxLa002)(Zr055Sn035Ti01)O3 (0≤x≤02) system. Structural chan ges and electric properties as a function of Barium content x have been investig ated by X-Ray diffraction, dielectric properties, polarization and longitudinal strain measurement. It is observed that AFEt changes to FER, and finally to ferroelectric relaxors(RFE) as Ba content x increases from zer o to 02. Based upon these expermental result, we are able to tailor the AFE-FE switching parameters such as Ef, ΔE and AFEt operating t emperature range ΔT through modifying the Ti/Sn ratio near AFEt/FER phase boundary in the (Pb087Ba01La00 2)(Zr06TiySn04-y)O3 (004 ≤y≤009) system. Finally, a new kind of AFEt ceramics with Ef =16kV/mm,ΔE=085kK/mm, and longitudinal strain x=01%—02% which is appropriate for application of digital actuators has been obtained. Phase dia gram with composition located near AFEt/FER boundary of t he studied system has been determined.
Keywords:Pb(Zr  Sn  Ti)O3 based antiferroelectric ceramics  electric field-induc ed phase transition  longitudinal strain  element substitution
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