磁控溅射制备本征ZnO/Ag/ZnO透明导电薄膜的性质研究

室温下采用射频磁控溅射氧化锌（ZnO）粉末靶、银（Ag）靶，在玻璃衬底上制备ZnO/Ag/ZnO透明导电薄膜。首先，ZnO厚度为30 nm时，改变Ag厚度制备3层透明导电薄膜，研究Ag层厚度及膜层间配比对光电性能的影响；其次，按ZnO∶Ag厚度比为30∶11比例制备不同厚度的3层透明导电薄膜，研究多层厚度对薄膜光电性能的影响。结果表明：Ag厚度为8 nm及11 nm的ZnO/Ag/ZnO表面相对平整，结晶程度较好，在可见光范围内最高透过率达到90%及86%，并且方块电阻为6 Ω/□及3.20 Ω/□，具有优良的光电性；当按配比制备ZnO/Ag/ZnO 3层膜时，增加ZnO厚度对Ag层的增透作用反而减弱，同时增加Ag层厚度也会降低3层薄膜的整体光学性。

Properties of ZnO/Ag/ZnO Transparent Conducting Thin Films Prepared by Magnetron Sputtering

At room temperature, ZnO/Ag/ZnO transparent conductive films were prepared on glass substrate by RF magnetron sputtering of zinc oxide(ZnO) powder and silver(Ag). When the thickness of ZnO was 30 nm, the thickness of Ag was changed to prepare three layers of transparent conductive films, and the influence of the thickness of Ag layer and the ratio between the layers on the photoelectric properties were studied. According to the ZnO/Ag ratio of 30:11, different thickness of three transparent conductive films were prepared, and the effect of multilayer thickness on the photovoltaic properties was researched. The results show that the surface of ZnO/Ag/ZnO with thickness of 8 nm and 11 nm are relatively flat, and have good degree of crystallinity with the maximum transmittance of 90% and 86% in the visible range and the sheet resistance of 6 Ω/□ and 3.20 Ω/□. The photoelectricity is excellent. When ZnO/Ag/ZnO three-layer films are prepared according to the ratio of 30:11, increasing the thickness of ZnO layer on the contrary enhances the light transmittance of Ag layer but decreases the overall optical layer thickness of the three-layer films.