反射式倒装对1 300 nm激光器性能改善的分析

对AlGaInAs多量子阱1 300 nm FP激光器进行反射式倒装封装，在热沉上靠近激光器出光端面约10~20 μm的区域采用Au反射层，对器件垂直方向出光进行反射。测试结果显示，与常规封装相比，采用这种结构封装芯片垂直发散角从34.5°降低至17°，器件单模光纤的平均耦合功率从1 850 μW提高至2 326 μW，耦合效率从21.1%提高到26.5%。对两种激光器进行光电参数的测量，结果表明：与常规封装器件相比，采用反射式倒装结构器件的饱和电流从135 mA提高至155 mA，饱和输出功率从37 mW提高至42 mW，热阻从194 K/W降低至131 K/W。最后对两种器件在95℃环境温度、100 mA电流下进行加速老化实验，老化结果显示：在老化条件下，器件衰退系数从常规封装的4.22×10^-5降低至1.06×10^-5，寿命从5 283 h提高至21 027 h。

Analysis The Performance Improvement of 1 300 nm Laser with Reflective Flip Chip Package

AlGaInAs MQWs 1 300 nm FP lasers were packaged p-side down with a reflective submount which had 10-20 μm Au film near the facets of laser bare die. Compared to convention package form laser (LD-B), the divergence angle at FWHM of flip chip (LD-A) with a Au reflector decreases from 34.5° to 17°, and the average SMF coupling power increases from 1 850 μW to 2 326 μW, as the coupling efficiency increases from 21.1% to 26.5%. Compared to LD-B, the saturated current of LD-A increases from 135 mA to 155 mA, the saturated output power increasses from 37 mW to 42 mW, and the thermal resistance decreases from 194 K/W to 131 K/W. Finnaly, the aging experiments are carried out under the condition of 95℃ ambient temperature and 100 mA injection current. Compared to LD-B, the degradation coefficient of LD-A under aging condition decreases from 4.22×10^-5 to 1.06×10^-5, and the lifetime increases from 5 283 h to 21 027 h.