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Partial charge ordering in the mixed-valent compound
Authors:H Mizoguchi  WJ Marshall  AP Ramirez  AW Sleight  MA Subramanian  
Institution:aDepartment of Chemistry and OSUMI, Oregon State University, Corvallis, OR 97331-4003, USA;bCentral Research and Development, Dupont Company, Experimental Station, Wilmington, DE 19880-0228, USA;cBell Laboratories, Alcatel-Lucent, 600 Mountain Avenue, Murray Hill, NJ 07974, USA
Abstract:Crystals of the mixed-valent compound View the MathML source were grown from a flux. The room temperature conductivity of a crystal was 3 S/cm but decreased smoothly with decreasing temperature to 10−5 S/cm at 25 K. Magnetic susceptibility data indicate a localized moment for Rh4+. A Seebeck coefficient at 200 K of +280 μV/K further confirms that this compound is a semiconductor rather than a metal with a partially filled 4d t2g band. A structure refinement based on single crystal X-ray diffraction data obtained at 173 and 296 K provided Rh–O distances sufficiently accurate to indicate the nature of the charge ordering between Rh3+ and Rh4+. The large Seebeck coefficient coupled with the high electrical conductivity indicates that this may be a promising low-temperature thermoelectric material.
Keywords:Rhodium oxide  Charge ordering  Bismuth  Electrical properties  Seebeck coefficient
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